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TC2320 bảng dữ liệu(PDF) 1 Page - Microchip Technology

tên linh kiện TC2320
Giải thích chi tiết về linh kiện  N-Channel and P-Channel Enhancement-Mode Dual MOSFET
PDF  12 Pages
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nhà sản xuất  MICROCHIP [Microchip Technology]
Trang chủ  http://www.microchip.com
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TC2320 bảng dữ liệu(HTML) 1 Page - Microchip Technology

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 2017 Microchip Technology Inc.
DS20005708A-page 1
TC2320
Features
• Low Threshold
• Low On-resistance
• Low Input Capacitance
• Fast Switching Speeds
• Free from Secondary Breakdown
• Low Input and Output Leakage
• Independent, Electrically Isolated N-channel and
P-channel
Applications
• Medical Ultrasound Transmitters
• High-voltage Pulsers
• Amplifiers
•Buffers
• Piezoelectric Transducer Drivers
• General Purpose Line Drivers
• Logic-level Interface
General Description
The TC2320 consists of a high-voltage, low-threshold
N-channel and P-channel MOSFET in an 8-Lead SOIC
package. This Enhancement-mode (normally-off)
transistor uses an advanced vertical DMOS structure
and a well-proven silicon gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance
and fast switching speeds are desired.
Package Type
8-lead SOIC
See Table 2-1 for pin information.
(Top view)
DP
DP
DN
DN
GP
SP
GN
SN
N-Channel and P-Channel Enhancement-Mode Dual MOSFET


Số phần tương tự - TC2320

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