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TC2320 bảng dữ liệu(PDF) 1 Page - Microchip Technology |
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TC2320 bảng dữ liệu(HTML) 1 Page - Microchip Technology |
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1 / 12 page ![]() 2017 Microchip Technology Inc. DS20005708A-page 1 TC2320 Features • Low Threshold • Low On-resistance • Low Input Capacitance • Fast Switching Speeds • Free from Secondary Breakdown • Low Input and Output Leakage • Independent, Electrically Isolated N-channel and P-channel Applications • Medical Ultrasound Transmitters • High-voltage Pulsers • Amplifiers •Buffers • Piezoelectric Transducer Drivers • General Purpose Line Drivers • Logic-level Interface General Description The TC2320 consists of a high-voltage, low-threshold N-channel and P-channel MOSFET in an 8-Lead SOIC package. This Enhancement-mode (normally-off) transistor uses an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type 8-lead SOIC See Table 2-1 for pin information. (Top view) DP DP DN DN GP SP GN SN N-Channel and P-Channel Enhancement-Mode Dual MOSFET |
Số phần tương tự - TC2320 |
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Mô tả tương tự - TC2320 |
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