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AR0504P3 bảng dữ liệu(PDF) 2 Page - Applied Power Microelectronics Co.,Ltd.

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AR0504P3 bảng dữ liệu(HTML) 2 Page - Applied Power Microelectronics Co.,Ltd.

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Revision,12/2017
2 of 6
www.appliedpowermicro.com
Absolute Maximum Ratings (TA=25°C unless otherwise specified
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
5
V
Pin 1, 2, or 3 to ground
Breakdown Voltage
VBR
6
V
IT = 1mA, pin 6 to ground
Reverse Leakage Current
IR
0.5
µA
VRWM = 5V, pin 6 to ground
Clamping Voltage
VC
10
V
IPP = 1A (8 x 20µs pulse), any I/O
pin to ground
Clamping Voltage
VC
15
V
IPP = 5A (8 x 20µs pulse), any I/O
pin to ground
Junction Capacitance
CJ
0.4
pF
VR = 0V, f = 1MHz, between I/O
pins
Junction Capacitance
CJ
0.6
0.8
pF
VR = 0V, f = 1MHz, any I/O pin to
ground
AR0504P3
Parameter
Symbol
Value
Unit
DP, DM, USB ID (Pins 1, 2, 3)
Peak Pulse Power (8/20µs)
Ppk
75
W
Peak Pulse Current (8/20µs)
IPP
5
A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±25
±20
kV
Operating Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
VBus (Pin 6)
Peak Pulse Power (8/20µs)
Ppk
100
W
Peak Pulse Current (8/20µs)
IPP
8
A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±25
±20
kV
Operating Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C



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