LND01 datasheet(2/12 Pages) MICROCHIP

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LND01

DS20005696A-page 2

 2017 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-source Voltage ....................................................................................................................................... BVDSX

Source-to-drain Voltage........................................................................................................................................ BVSDX

Gate-to-source Voltage ............................................................................................................................ –12V to +0.6V

Gate-to-drain Voltage ............................................................................................................................... –12V to +0.6V

Operating Ambient Temperature, TA ................................................................................................... –25°C to +125°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. (Note 1)

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Drain-to-source Breakdown Voltage

BVDSX

—

VGS = –3V, IDS = 10 µA

Source-to-drain Breakdown Voltage

BVSDX

—

VGD = –3V, ISD = 10 µA

Gate-to-source Off Voltage

VGS(OFF) –0.8

—

–3

VDS = 9V, IDS = 1 µA

Source-to-gate Off Voltage

VSG(OFF) –0.8

—

–3

VSD = 9V, ISD = 1 µA

Gate-to-source Diode

VGS

–12

—

0.6

IGS = ±1 µA

Gate-to-drain Diode

VGD

–12

—

0.6

IGD = ±1 µA

Drain-to-source Leakage Current

IDS(OFF)

—

µA

VGS = –3V, VDS = 9V

Source-to-drain Leakage Current

ISD(OFF)

—

µA

VGD = –3V, VSD = 9V

Saturated Drain-to-source Current

IDSS

300

—

VGS = 0V, VDS = 9V

Saturated Source-to-drain Current

ISDD

300

—

VGD = 0V, VSD = 9V

Static Drain-to-source On-state

Resistance

RDS(ON)

—

0.9

1.4

Ω

VGS = 0V, IDS = 100 mA

Static Source-to-drain On-state

Resistance

RSD(ON)

—

0.9

1.4

Ω

VGD = 0V, ISD = 100 mA

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.



(Pulse test: 300 µs pulse, 2% duty cycle)

2: Specification is obtained by characterization and is not 100% tested.

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. (Note 2)

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Forward Transconductance

GFS

200

—

mmho VDS = 9V, IDS = 50 mA

Input Capacitance

CISS

—

VGS = –3V, VDS = 5V, 

f = 1 MHz

Common Source Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-on Delay Time

td(ON)

—

3.8

—

VDD = 9V, IDS = 100 mA,

RGEN = 25Ω

Rise Time

—

Turn-off Delay Time

td(OFF)

—

Fall Time

—

6.4

—

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.



(Pulse test: 300 µs pulse, 2% duty cycle)

2: Specification is obtained by characterization and is not 100% tested.

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