PBLS6002D datasheet(6/16 Pages) PHILIPS

6 / 16 page

9397 750 15197

Product data sheet

Rev. 01 — 23 June 2005

6 of 16

Philips Semiconductors

PBLS6002D

60 V PNP BISS loadswitch

Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 4.

TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;

typical values

006aaa464

102

103

Zth(j-a)

(K/W)

10−5

10−2

10−4

102

10−1

tp (s)

10−3

103

0.75

0.5

0.33

0.2

0.1

δ = 1

0.05

0.02

0.01

Table 7:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat transistor

ICBO

collector-base cut-off

current

VCB = −60 V; IE =0A

−100 nA

VCB = −60 V; IE =0A;

Tj = 150 °C

−50

µA

ICES

collector-emitter cut-off

current

VCE = −60 V; VBE =0V

−100 nA

IEBO

emitter-base cut-off current VEB = −5 V; IC =0A

−100 nA

hFE

DC current gain

VCE = −5 V; IC = −1 mA

200

350

VCE = −5V;

IC = −500 mA

[1] 150

230

VCE = −5V;

IC = −1000 mA

[1] 100

160

VCEsat

collector-emitter saturation

voltage

IC = −100 mA;

IB = −1mA

−110 −175 mV

IC = −500 mA;

IB = −50 mA

[1] -

−135 −180 mV

IC = −1000 mA;

IB = −100 mA

[1] -

−255 −340 mV

RCEsat

collector-emitter saturation

resistance

IC = −1A;

IB = −100 mA

[1] -

255

340

Ω

VBEsat

base-emitter saturation

voltage

IC = −1 A; IB = −50 mA

[1] -

−0.95 −1.1

PBLS6002D bảng dữ liệu(PDF) 6 Page - NXP Semiconductors

PBLS6002D bảng dữ liệu(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

bảng dữ liệu tải về

Link URL