2 / 6 page
5-2
RF2402
Rev B1 010329
5
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (
VDD)
-0.5 to +7.5
VDC
Power Down Voltage
-0.5 to VDD+0.4
VDC
Input LO and RF Levels
+6
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Carrier Input
T=25°C, VCC=5VDC, I&Q inputs=2VPP
Frequency Range
600 to 1000
MHz
Power Level
-3 to +6
dBm
Input VSWR
1.2:1
With external 50
Ω termination.
Input Impedance
200- j200
Ω
At 900MHz, without external 50
Ω termina-
tion.
Modulation Input
Frequency Range
DC to 100
MHz
Reference Voltage (VREF)
2.0 to 3.0
V
Modulation (I&Q)
VREF±2
V
I & Q signals for 0dBm output power.
Maximum Modulation (I&Q)
VREF±2.5
V
In-phase and quadrature signals.
Input Resistance
3000
Ω
DC Offset
50
150
mV
ISIG-IREF and QSIG-QREF for DC balance
Amplitude Error (I/Q)
0.2
dB
Quadrature Phase Error
±3
°
From 800MHz to 1000MHz.
RF Output
VDD=5V, LO Power=0dBm, LO
Freq= 900MHz, SSB
Output Power
0
dBm
Output Impedance
50
Ω
Output VSWR
1.5:1
Broadband Noise Floor
-155
dBm/Hz
Sideband Suppression
25
dB
Carrier Suppression
40
dB
Modulation DC offset externally adjusted for
optimum suppression. Suppression is typi-
cally better than 25dB without adjustment.
Power Down
Turn On/Off Time
<100
ns
PD Input Resistance
> 1
M
Ω
Power Down “ON”
VCC
V
Threshold voltage
Power Down “OFF”
0
V
Threshold voltage
Power Supply
Voltage
5
V
Specifications
3 to 5.5
V
Operating Limits
Current
28
39
mA
Operating
0.5
2
mA
Power Down
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Vietnamese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
