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Giải thích chi tiết về linh kiện  N-Channel 60-V (D-S) MOSFET
PDF  8 Pages
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nhà sản xuất  VBSEMI [VBsemi Electronics Co.,Ltd]
Trang chủ  www.VBsemi.com
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Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Unit
Min.
Typ.a
Max.
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 10 µA
60
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
12.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 10
µA
VDS = 0 V, VGS = ± 15 V
1
VDS = 0 V, VGS = ± 10 V
± 150
nA
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
± 1000
VDS = 0 V, VGS = ± 5 V
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
µA
VDS = 60 V, VGS = 0 V , TJ = 125 °C
500
On-State Drain Currenta
ID(on)
VGS = 10 V, VDS = 7.5 V
500
mA
VGS = 4.5 V, VDS = 10 V
300
Drain-Source On-Resistancea
RDS(on)
VGS = 10 V, ID = 200 mA
Ω
VGS = 4.5 V, ID = 150 mA
Forward Transconductancea
gfs
VDS = 10 V, ID = 100 mA
100
mS
Diode Forward Voltage
VSD
IS = 100 mA, VGS = 0 V
1.3
V
Dynamica
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V
ID ≅ 150 mA
0.4
0.6
nC
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V
f = 1 MHz
25
pF
Output Capacitance
Coss
5
Reverse Transfer Capacitance
Crss
2.0
Switchinga, b, c
Turn-On Time
td(on)
VDD = 30 V, RL = 150 Ω
ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω
20
ns
Turn-Off Time
td(off)
30
2.8
3.1
3.3
3.8
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
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