IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1

6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

45

65

S

C

iss

4700

pF

C

oss

V

1850

pF

C

rss

600

pF

t

d(on)

35

ns

t

r

V

50

ns

t

d(off)

R

85

ns

t

f

26

ns

Q

g(on)

155

nC

Q

gs

V

33

nC

Q

gd

85

nC

R

thJC

0.25 K/W

R

thCK

(TO-247)

0.21

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

typ.

Max.

I

S

V

140

A

I

SM

Repetitive

300

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

t

rr

I

120

ns

-di/dt = 100 A/

μs

Q

RM

V

0.8

μC

I

RM

6A

IXFH 140N10P

IXFT 140N10P

TO-268 Outline

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3