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AS5047U-HTST bảng dữ liệu(PDF) 39 Page - ams AG |
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AS5047U-HTST bảng dữ liệu(HTML) 39 Page - ams AG |
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39 / 51 page ![]() ams Datasheet Page 39 [v1-00] 2018-Oct-30 Document Feedback AS5047U − Application Information Figure 57: Programming Parameter Note(s): 1. Programming parameter valid for AS5047U. Step-by-Step Procedure to Permanently Program the Non-Volatile Memory (OTP): The programming can either be performed in 5V operation using the internal LDO (1 μF on regulator output pin), or in 3V Operation but using a supply voltage between 3.3V and 3.5V. 1. Power on cycle 2. Write the SETTINGS1 and SETTINGS2 and SETTINGS3 registers with the Custom settings for this application 3. Place the magnet at the desired zero position 4. Read out the measured angle from the ANGLECOM register 5. Write ANGLECOM [5:0] into the ZPOSL register and ANGLECOM[13:6] into the ZPOSM register 6. Read reg(0x0016) to reg(0x001A) 7. Set ECC_en in Register ECC to 1 (ECC protection enabled) 8. Read ECC_s (0x3FD0) to get the correct ECC key 9. Write ECC_s key into ECC register 10. Read reg(0x0016) to reg(0x001B) → read register step1 11. Comparison of written content (settings and angle) with content of read register step1 12. If point 11 is correct, enable OTP read / write by setting PROGEN = 1 in the PROG register 13. Start the OTP burn procedure by setting PROGOTP = 1 in the PROG register 14. Read the PROG register until it reads 0x0001 (Programming procedure complete) Symbol Parameter Conditions Min Typ Max Units TaProg Programming temperature Programming @ Room Temperature (25°C ± 20°C) 545 °C VDD Positive supply voltage 5 V operation mode. Supply voltage during programming 4.5 5 5.5 V VDD Positive supply voltage 3.3 V operation mode. Supply voltage during programming 3.3 3.5 V IProg Current for programming Max current during OTP burn procedure. 100 mA |
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