VBQF2120 datasheet(2/8 Pages) VBSEMI

2 / 8 page

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. Maximum under steady state conditions is 72 °C/W.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

RthJA

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 12

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 13.3

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

2.4

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.

- 1.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = 5 V

- 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 12 V, VGS = 0 V

- 1

µA

VDS = - 12 V, VGS = 0 V, TJ = 70 °C

- 10

On-State Drain Currenta

ID(on)

VDS 5 V, VGS = - 4.5 V

- 20

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 1 A

0.015



VGS = - 2.5 V, ID = - 1 A

0.0

VGS = - 1.8 V, ID = - 1 A

0.02

Forward Transconductancea

gfs

VDS = - 4 V, ID = - 1 A

8.3

Dynamicb

Input Capacitance

Ciss

VDS = - 6 V, VGS = 0 V, f = 1 MHz

2220

Output Capacitance

Coss

865

Reverse Transfer Capacitance

Crss

555

Total Gate Charge

VDS = - 6 V, VGS = - 5 V, ID = - 1 A

VDS = - 6 V, VGS = - 4.5 V, ID = - 1 A

Gate-Source Charge

Qgs

7.3

Gate-Drain Charge

Qgd

5.9

Gate Resistance

VGS = - 0.1 V, f = 1 MHz



Turn-On Delay Time

td(on)

VDD = - 6 V, RL = 4 

ID  - 1 A, VGEN = - 4.5 V, Rg = 6 

Rise Time

Turn-Off Delay Time

td(off)

380

570

Fall Time

240

360

VBQF2120

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