VBMB1101M datasheet(2/8 Pages) VBSEMI

2 / 8 page

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-65

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-3.1

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

100

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

0.13

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

3.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

µA

VDS = 80 V, VGS = 0 V, TJ = 150 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 10 Ab

0.086

Forward Transconductance

gfs

VDS = 50 V, ID = 10 Ab

9.1

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

1700

Output Capacitance

Coss

560

Reverse Transfer Capacitance

Crss

120

Drain to Sink Capacitance

f = 1.0 MHz

Total Gate Charge

VGS = 10 V

ID = 17 A, VDS = 80 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 50 V, ID = 17 A,

RG = 9.1 Ω, RD= 2.9 Ω,

see fig. 10b

-11

Rise Time

-44

Turn-Off Delay Time

td(off)

-53

Fall Time

-43

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

Internal Source Inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 17 A, VGS = 0 Vb

2.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb

180

360

Body Diode Reverse Recovery Charge

Qrr

-1.3

2.6

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

VBMB1101M

VBMB1101M bảng dữ liệu(PDF) 2 Page - VBsemi Electronics Co.,Ltd

VBMB1101M bảng dữ liệu(HTML) 2 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL