VBMB17R07 datasheet(2/8 Pages) VBSEMI

2 / 8 page

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS

b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

°C/W

Maximum junction-to-case (drain)

RthJC

3.1

4.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

700

VDS temperature coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

0.73

V/°C

Gate-source threshold voltage (N)

VGS(th)

VDS = VGS, ID = 250 μA

Gate-source leakage

IGSS

VGS = ± 20 V

± 100

VGS = ± 30 V

± 1

μA

Zero gate voltage drain current

IDSS

VDS = 700 V, VGS = 0 V

μA

VDS = 560 V, VGS = 0 V, TJ = 125 °C

Drain-source on-state resistance

RDS(on)

VGS = 10 V

ID = 3 A

1.36



Forward transconductance

gfs

VDS = 30 V, ID = 3 A

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 100 V,

f = 1 MHz

410

820

Output capacitance

Coss

Reverse transfer capacitance

Crss

Effective output capacitance, energy

related a

Co(er)

VDS = 0 V to 560 V, VGS = 0 V

-36

Effective output capacitance, time

related b

Co(tr)

117

Total gate charge

VGS = 10 V

ID = 3 A, VDS = 520 V

-24

Gate-source charge

Qgs

-6

Gate-drain charge

Qgd

-11

Turn-on delay time

td(on)

VDD = 560 V, ID = 3 A,

VGS = 10 V, Rg = 9.1 

-14

Rise time

-12

Turn-off delay time

td(off)

-30

Fall time

-20

Gate input resistance

f = 1 MHz, open drain

0.4

1.4

2.7



Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the



integral reverse



p - n junction diode

Pulsed diode forward current

ISM

Diode forward voltage

VSD

TJ = 25 °C, IS = 3 A, VGS = 0 V

0.83

1.3

Reverse recovery time

trr

TJ = 25 °C, IF = IS = 3 A,

dI/dt = 100 A/μs, VR = 25 V

118

237

474

Reverse recovery charge

Qrr

-2.2

μC

Reverse recovery current

IRRM

-16

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