VBM1102M datasheet(4/9 Pages) VBSEMI

tên linh kiện	VBM1102M

Giải thích chi tiết về linh kiện	N-Channel 100-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

nhà sản xuất	VBSEMI [VBsemi Electronics Co.,Ltd]

Trang chủ	www.VBsemi.com

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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

750

600

450

300

150

100

101

VDS, Drain-to-Source Voltage (V)

iss

rss

oss

GS = 0 V, f = 1 MHz

iss = Cgs + Cgd, Cds Shorted

rss = Cgd

oss = Cds + Cgd

91018_05

QG, Total Gate Charge (nC)

D = 9.2 A

For test circuit

see figure 13

DS = 20 V

DS = 50 V

DS = 80 V

91018_06

101

100

VSD, Source-to-Drain Voltage (V)

°C

175

°C

GS = 0 V

0.5

0.9

0.8

0.7

0.6

1.0

1.2

1.1

10-1

91018_07

102

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

C = 25 °C

J = 175 °C

Single Pulse

0.1

103

0.1

102

103

91018_08

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VBM1102M

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