MBR20150CD datasheet(1/2 Pages) ISC

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Schottky Barrier Rectifier

MBR20150CD

FEATURES

·

Multilayer Metal -Silicon Potential Structure.

·

Low Leakage Current.

·

High Current Capability, High Efficiency.

·

High Junction Temperature Capability.

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation.

APPLICATIONS

·

For use in low voltage,high frequency inverters,

free wheeling and polarity protection applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

Peak Repetitive Reverse Voltage

150

V

IF(AV)

Average Rectified Forward Current

20

A

IFSM

Nonrepetitive Peak Surge Current

8.3ms single half sine-wave superimposed on rated load conditions

290*2

A

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-40~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.0

℃

/W

ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

VF

Maximum Instantaneous Forward

Voltage

IF= 10A ; Tc= 25℃

0.9

V

IF= 10A ; Tc= 125℃

0.78

IR

Maximum Instantaneous Reverse

Current

VR= 150V; Tc= 25℃

0.01

mA

VR= 150V; Tc= 125℃

10

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Số phần tương tự - MBR20150CD

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