HANDWOUND datasheet(3/20 Pages) NXP

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MRFX600H MRFX600HS MRFX600GS

RF Device Data

NXP Semiconductors

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS =65 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.1

—

Output Capacitance

(VDS =65 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

Input Capacitance

(VDS =65 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

299

—

Functional Tests (2) (In NXP Production Test Fixture, 50 ohm system) VDD =65 Vdc, IDQ(A+B) = 100 mA, Pout = 600 W Peak

(120 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle

Power Gain

Gps

24.5

26.4

27.5

Drain Efficiency

D

71.0

74.4

—

Input Return Loss

IRL

—

–23

–12

Table 5. Load Mismatch/Ruggedness (In NXP Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA

Frequency

(MHz)

Signal Type

VSWR

(W)

Test Voltage, VDD

Result

230

Pulse

(100 sec, 20% Duty Cycle)

> 65:1 at all

Phase Angles

2.5 Peak

(3 dB Overdrive)

No Device Degradation

Table 6. Ordering Information

Device

Tape and Reel Information

Package

MRFX600HR5

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel

NI--780H--4L

MRFX600HSR5

R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel

NI--780S--4L

MRFX600GSR5

NI--780GS--4L

1. Each side of device measured separately.

2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing

(GS) parts.

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