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STG25H120F2D7 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

tên linh kiện STG25H120F2D7
Giải thích chi tiết về linh kiện  1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
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STG25H120F2D7 bảng dữ liệu(HTML) 4 Page - STMicroelectronics

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Electrical ratings
STG25H120F2D7
4/10
DocID027364 Rev 1
2
Electrical ratings
Table 3. Absolute maximum ratings (TJ = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
1200
V
VGE
Gate-emitter voltage
±20
V
IC
Continuous collector current limited by TJmax
25(1)
1.
Depending on thermal properties of assembly
.
A
ICP
(1)(2)
2.
Pulse width limited by maximum junction temperature.
Pulsed collector current, Tp limited by TJmax
75
A
tSC
(3)
3.
Not tested at chip level, verified by design/characterization.
Short circuit with stand time
VCC= 600 V,VGE= 15 V, TJstart ≤ 150°C
5µs
Tj
Operating junction temperature
- 55 to 175
°C
Table 4. Static characteristics (tested on wafer unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-emitter
breakdown voltage
IC = 1 mA, VGE = 0 V
1200
V
VCE(sat)
Collector-emitter
saturation voltage
VGE = 25 V, IC= 15 A
2.6
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 500µA
5
6
7
V
IGES
Gate-emitter leakage
current
VGE = ± 20V, VCE = 0 V
± 250
nA
ICES
Collector cut-off current
VCE = 1200 V, VGE= 0
25
µA



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