DN3525 datasheet(3/14 Pages) MICROCHIP

3 / 14 page

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. Specification is obtained by characterization and is

not 100% tested.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Forward Transconductance

GFS

225

—

mmho VDS = 10V, ID = 150 mA

Input Capacitance

CISS

—

270

350

VGS = –5V,

VDS = 25V,

f = 1 MHz

Common Source Output

Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-On Delay Time

td(ON)

—

VDD = 25V,

ID = 150 mA,

RGEN = 25Ω,

VGS = 0V to –10V

Rise Time

—

Turn-Off Delay Time

td(OFF)

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

1.8

VGS = –5V, ISD = 150 mA

(Note 1)

Reverse Recovery Time

trr

—

800

—

VGS = –5V, ISD = 150 mA

Note 1: Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty

cycle

TEMPERATURE SPECIFICATIONS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

3-lead SOT-89

JA

—

133

—

°C/W

THERMAL CHARACTERISTICS

Package

ID (Note 1)

(Continuous)

(mA)

(Pulsed)

(A)

Power Dissipation at

TA = 25°C

(Note 2)

(W)

IDR (Note 1)

(mA)

IDRM

(A)

3-lead SOT-89

360

1.6

360

Note 1: ID (continuous) is limited by maximum TJ.

2: Mounted on an FR4 board, 25 mm x 25 mm x 1.57 mm

 2018 Microchip Technology Inc.

DS20005705A-page 3

DN3525

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