SWI1008UF-R22G datasheet(1/2 Pages) TAI-TECH

tên linh kiện	SWI1008UF-R22G

Giải thích chi tiết về linh kiện	High Frequency Winding Type Chip Inductor

PDF	2 Pages

Scroll/Zoom	100%

nhà sản xuất	TAI-TECH [TAI-TECH Advanced Electronics Co., Ltd.]

Trang chủ	https://www.tai-tech.com.tw/en/

Logo

1 / 2 page

TAI-TECH

www.tai-tech.com.tw

P2

1. Features

2. Dimensions

3. Part Numbering

4. Specification

SWI

1008

U

F

-

10N

J

A

B

C

D

E

F

A: Series

B: Dimension

LxW

C: Material

D: Lead Free Code

E: Inductance

10N=10nH

F: Inductance Tolerance

G=±2%, J=±5%, K=±10%

Size

A(mm)

B(mm)

C(mm)

D(mm)

E(mm)

SWI1008

2.92 max.

2.79 max.

2.20 max.

1.20 ref.

0.55±0.1

Unit:mm

1. Ceramic core wire wound construction.

2. No batch to batch variations in inductance

3. High Reliability due to ceramic wire wound construction.

4. High frequency application.

5. Small footprint as well as low profile.

6. 100% Lead(Pb) & Halogen-Free and RoHS compliant.

7. Operating temperature -40~+125℃ (Including self - temperature rise)

High Frequency Winding Type Chip Inductor SWI1008UF-SERIES

Part Number

Inductance

(nH)

Tolerance

Test Frequency

(Hz)

Q @ Test Freq.

min.

Rated Current

(mA) max.

DCR

(Ω) max.

SRF

(MHz) min.

SWI1008UF-10N□

10

G, J, K

0.1V/50M

50/500

1000

0.08

4100

SWI1008UF-12N□

12

G, J, K

0.1V/50M

50/500

1000

0.09

3300

SWI1008UF-15N□

15

G, J, K

0.1V/50M

50/500

1000

0.18

2500

SWI1008UF-18N□

18

G, J, K

0.1V/50M

50/350

1000

0.11

2500

SWI1008UF-22N□

22

G, J, K

0.1V/50M

55/350

1000

0.12

2400

SWI1008UF-27N□

27

G, J, K

0.1V/50M

55/350

1000

0.13

1600

SWI1008UF-33N□

33

G, J, K

0.1V/50M

60/350

1000

0.14

1600

SWI1008UF-39N□

39

G, J, K

0.1V/50M

60/350

1000

0.15

1500

SWI1008UF-47N□

47

G, J, K

0.1V/50M

65/350

1000

0.16

1500

SWI1008UF-56N□

56

G, J,K

0.1V/50M

65/350

1000

0.18

1300

SWI1008UF-68N□

68

G, J,K

0.1V/50M

65/350

1000

0.20

1300

SWI1008UF-82N□

82

G, J,K

0.1V/50M

60/350

1000

0.22

1000

SWI1008UF-R10□

100

G, J,K

0.1V/25M

60/350

650

0.56

1000

SWI1008UF-R12□

120

G, J,K

0.1V/25M

60/350

650

0.63

950

Halogen-free

Halogen

Số phần tương tự - SWI1008UF-R22G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Xian Semipower Electron...	SWI100N03	509Kb / 5P	N-channel MOSFET
VBsemi Electronics Co.,...	SWI100N03	996Kb / 7P	N-Channel 30-V (D-S) MOSFET

More results

Mô tả tương tự - SWI1008UF-R22G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
TAI-TECH Advanced Elect...	WIH3225F	107Kb / 1P	Winding Type Chip Inductor
	SWI0805F	164Kb / 2P	High Frequency Winding Type Chip Inductor
	SWI0603F	162Kb / 2P	High Frequency Winding Type Chip Inductor
	SWI0402F	907Kb / 11P	High Frequency Winding Type Chip Inductor
	SWF2012CF	163Kb / 2P	Winding Type Chip Inductor
	SWF1608RIF-SERIES-X5	182Kb / 2P	Winding Type Chip Inductor
	SWF1608CF	222Kb / 2P	Winding Type Chip Inductor
	SWC108I	81Kb / 2P	High Frequency Winding Type Chip Inductor
	SWC85I	82Kb / 2P	High Frequency Winding Type Chip Inductor
	SWC63I	87Kb / 2P	High Frequency Winding Type Chip Inductor

More results

SWI1008UF-R22G bảng dữ liệu(PDF) 1 Page - TAI-TECH Advanced Electronics Co., Ltd.

SWI1008UF-R22G bảng dữ liệu(HTML) 1 Page - TAI-TECH Advanced Electronics Co., Ltd.

Số phần tương tự - SWI1008UF-R22G

Mô tả tương tự - SWI1008UF-R22G

Html Pages

1 2

bảng dữ liệu tải về

Link URL