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LT4256-3IGN bảng dữ liệu(PDF) 15 Page - Linear Technology

tên linh kiện LT4256-3IGN
Giải thích chi tiết về linh kiện  Positive High Voltage Hot Swap Controller with Open-Circuit Detect
PDF  20 Pages
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LT4256-3IGN bảng dữ liệu(HTML) 15 Page - Linear Technology

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LT4256-3
15
42563f
This open FET condition can be falsely signalled during
start-up if the load is not activated until after PWRGD goes
high. To avoid this false indication, OPEN and PWRGD
should not be polled for a period of time, tSTARTUP, given
by:
t
VC
A
STARTUP
CC
=
µ
31
30
••
(9)
This can be accomplished either by a microcontroller (if
available) or by placing an RC filter as shown in Figure 13.
Once the OPEN voltage exceeds the monitoring logic thresh-
old, VTHRESH, and PWRGD is low, an open FET condition
is signalled. In order to prevent a false indication, the RC
product should be set with the following equation:
RC
VC
A
V
VV
CC
LOGIC
LOGIC
THRESH
>
µ




31
30
••
ln
–
(10)
Another condition that can cause a false indication is if the
LT4256-3 goes into current limit during start-up. This will
cause tSTARTUP to be longer than calculated. Also, if the
LT4256-3 stays in current limit long enough for TIMER to
fully charge up to its threshold, the LT4256-3 will either
latch off (RETRY = 0) or go into the current limit hiccup
mode (RETRY = floating). In either case, an open FET
condition will be falsely signalled. If the LT4256-3 does go
into current limit during start-up, C1 can be increased (see
Power-Up Sequence).
APPLICATIO S I FOR ATIO
Supply Transient Protection
The LT4256-3 is 100% tested and guaranteed to be safe
from damage with supply voltages up to 80V. However,
voltage transients above 100V may cause permanent
damage. During a short-circuit condition, the large change
in currents flowing through the power supply traces can
cause inductive voltage transients which could exceed
100V. To minimize the voltage transients, the power trace
parasitic inductance should be minimized by using wider
traces or heavier trace plating and a bypass capacitor
should be placed between VCC and GND. A surge suppres-
sor (TransZorb
®) at the input can also prevent damage
from voltage transients.
GATE Pin
A curve of gate drive vs VCC is shown in Figure 14. GATE
is clamped to a maximum voltage of 12.8V above VOUT.
This clamp is designed to withstand the internal charge
pump current. An external Zener diode must be used as
shown in all applications. At a minimum input supply
voltage of 10.8V, the minimum gate drive voltage is 4.5V.
When the input supply voltage is higher than 20V, the gate
drive voltage is at least 10V and a standard threshold
MOSFET can be used. In applications from 12V to 15V
range, a logic level MOSFET must be used.
Figure 13. Delay Circuit for OPEN FET Detection
4
R
C
4256 F13
OPEN
LT4256-3
TO
MONITORING
LOGIC
VLOGIC
INTERNAL
OPEN COLLECTOR
PULL-DOWN
Figure 14.
∆VGATE vs VCC
VCC (V)
10
3
4
6
7
8
13
10
30
50
60
4256 F14
5
11
12
9
20
40
70
80
TransZorb is a registered trademark of General Instruments, GSI.



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