AFSC5G35D35 datasheet(4/12 Pages) NXP

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RF Device Data

NXP Semiconductors

AFSC5G35D35

Table 5. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Typ

Range

Unit

Carrier Stage 1 — On Characteristics

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID =1.6 Adc)

VGS(th)

1.1

0.4

Vdc

Gate Quiescent Voltage

(VDS =24 Vdc, IDQ1A =19 mAdc)

VGS(Q)

2.0

0.4

Vdc

Fixture Gate Quiescent Voltage (2)

(VDD =24 Vdc, IDQ1A = 19 mAdc, Measured in Functional Test)

VGG(Q)

5.8

1.4

Vdc

Carrier Stage 2 — On Characteristics

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID =8.8 Adc)

VGS(th)

1.1

0.4

Vdc

Gate Quiescent Voltage

(VDS =24 Vdc, IDQ2A =28 mAdc)

VGS(Q)

1.8

0.4

Vdc

Fixture Gate Quiescent Voltage (3)

(VDD =24 Vdc, IDQ2A = 28 mAdc, Measured in Functional Test)

VGG(Q)

2.6

1.2

Vdc

Peaking Stage 1 — On Characteristics (1)

Gate Threshold Voltage

(VDS =10 Vdc, ID =3.2 Adc)

VGS(th)

1.1

0.4

Vdc

Peaking Stage 2 — On Characteristics (1)

Gate Threshold Voltage

(VDS =10 Vdc, ID = 16.8 Adc)

VGS(th)

1.1

0.4

Vdc

1. Each side of device measured separately.

2. VGG =2.90  VGS(Q). Parameter measured on NXP test fixture due to temperature compensation bias network on the board. Refer to

reference circuit layout.

3. VGG =1.44  VGS(Q). Parameter measured on NXP test fixture due to temperature compensation bias network on the board. Refer to

reference circuit layout.

(continued)

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