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R2000 bảng dữ liệu(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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R2000 bảng dữ liệu(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 2 page ![]() HIGH VOLTAGE RECTIFIER DN:T19820A0 https://www.microdiode.com Rev:2019A0 Page :1 Reverse Voltage - 1200 to 2000 Volts Forward Current - 0.5/0.2 Ampere R1200 THRU R2000 Mechanical Data Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension DO-15 Dimensions in inches and (millimeters) Case : JEDEC DO-41/DO-15 Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight :0.012 ounce, 0.33 grams(DO-41) 0.014 ounce, 0.40 grams(DO-15) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unless otherwisespecified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. DO-41 0.140 (3.6) 0.104(2.6) DIA. 0.034 (0.86) 0.028 (0.70) DIA. 0.300(7.6) 0.230(5.8) 1.0 (25.4) MIN. 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.034 (0.86) 0.028 (0.70) DIA. 1.0 (25.4) MIN. 0.205 (5.2) 0.160(4.1) 1.0 (25.4) MIN. Parameter SYMBOLS R1200 R1500 R1800 R2000 UNITS Marking Code MDD R1200 MDD R1500 MD R1800 MDD R2000 Maximum repetitive peak reverse voltage VRRM 1200 1500 1800 2000 V Maximum RMS voltage VRMS 840 1050 1260 1400 V Maximum DC blocking voltage VDC 1200 1500 1800 2000 V Maximum average forward rectified current 0.375”(9.5mm) lead length (see fig.1) I(AV) 0.5 0.2 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30.0 A Maximum instantaneous forward voltage at 0.5/0.2A VF 2.0 3.0 V Maximum DC reverse current TA=25°C at rated DC blocking voltage TA=100°C IR 5.0 50.0 μA Typical junction capacitance (NOTE 1) CJ 15.0 pF Typical thermal resistance (NOTE 2) RθJA 50.0 °C/W Operating junction and storage temperature range TJ,TSTG -65 to +150 °C Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted |
Số phần tương tự - R2000 |
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Mô tả tương tự - R2000 |
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