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MBR3045CT bảng dữ liệu(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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MBR3045CT bảng dữ liệu(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 2 page  SCHOTTKY BARRIER RECTIFIER DN:T19826A0 https://www.microdiode.com Rev:2019A0 Page :1 Reverse Voltage - 20 to 100 Volts Forward Current - 30.0 Ampere MBR3020CT THRU MBR30100CT Mechanical Data Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250°C,0.25”(6.35mm) from case for 10 seconds TO-220AB Dimensions in inches and (millimeters) Case : JEDEC TO-220AB Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.080 ounce, 2.24 grams Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS MBR 3020CT MBR 3030CT MBR 3040CT MBR 3045CT MBR 3050CT MBR 3060CT MBR 3070CT MBR 3080CT MBR 3090CT MBR 30100CT UNITS Marking Code MDD MBR 3020CT MDD MBR 3030CT MDD MBR 3040CT MDD MBR 3045CT MDD MBR 3050CT MDD MBR 3060CT MDD MBR 3070CT MDD MBR 3080CT MDD MBR 3090CT MDD MBR 30100CT Maximum repetitive peak reverse voltage VRMM 20 30 40 45 50 60 70 80 90 100 V Maximum RMS voltage VRMS 14 21 28 32 35 42 49 56 63 70 V Maximum DC blocking voltage VDC 20 30 40 45 50 60 70 80 90 100 V Maximum average forward rectified current (see fig.1) I(AV) 30.0 A Peak forward surge current 8.3ms single half sine-wave IFSM 250 A Maximum instantaneous forward voltage at 15.0A VF 0.55 0.75 0.85 V TA=25℃ Maximum DC reverse current at rated DC blocking voltage TA=100℃ IR 1.0 mA 15.0 50.0 Typical junction capacitance (NOTE 1) CJ 750 500 pF Typical thermal resistance (NOTE 2) RθJC 2.0 ℃ /W Operating junction temperature range TJ -65 to +125 -65 to +150 ℃ storage temperature range TSTG -65 to +150 ℃ Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to case. 0.160 (4.05) 0.140 (3.55) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037(0.94) 0.027(0.68) 0.105 (2.67) 0.095 (2.41) 0.635(16.13) 0.625(15.87) 0.113(2.87) 0.103(2.62) 0.154(3.91) 0.148(3.74) 0.415(10.54) MAX 0.410(10.41) 0.390(9.91) 0.145(3.68) 0.135(3.43) 0.350(8.89) 0.330(8.38) 1.148(29.16) 1.118(28.40) 0.590(14.22) 0.530(13.46) 0.022(0.58) 0.014(0.35) 0.110(2.79) 0.100(2.54) 0.560(14.2) 0.530(13.4) 0.057(1.45) 0.051(1.30) 0.185(4.70) 0.175(4.44) PIN 1 PIN 3 PIN 2 CASE 1 1 1 PIN DIA |
Số phần tương tự - MBR3045CT |
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Mô tả tương tự - MBR3045CT |
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