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ES3AF bảng dữ liệu(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

tên linh kiện ES3AF
Giải thích chi tiết về linh kiện  SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
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nhà sản xuất  CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]
Trang chủ  http://www.microdiode.com/en
Logo CHENDA - Microdiode Semiconductor (Shenzhen) Co., Ltd

ES3AF bảng dữ liệu(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

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SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
DN:T19712A0
https://www.microdiode.com
Rev:2019A0
Page :1
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere
ES3AF THRU ES3JF
Mechanical Data
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated
placement High forward surge current capability
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Glass passivated chip junction
Case : JEDEC SMAF Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Weight : 0.00095 ounce, 0.027 grams
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum Ratings And Electrical Characteristics
Parameter
SYMBOLS
ES
3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF
UNITS
Marking Code
MDD
ES
3AF
MDD
ES
3BF
MDD
ES
3CF
MDD
ES
3DF
MDD
ES
3EF
MDD
ES
3GF
MDD
ES
3JF
Maximum repetitive peak reverse voltage
VRMM
50
100
150
200
300
400
600
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
600
V
Maximum average forward rectified current
at TL=55℃
I(AV)
3.0
A
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
IFSM
80
A
Maximum instantaneous forward voltage at
3.0A
VF
1
1.25
1.
68
V
TA=25℃
Maximum DC reverse current
at rated DCblocking voltage
TA=125℃
IR
5.0
100.0
μA
Maximum reverse recovery time
(NOTE 1)
trr
35
ns
Typical junction capacitance (NOTE 2)
CJ
40.0
pF
Typical thermal resistance (NOTE 3)
RJA
50.0
℃/
W
Operating junction and storage temperature range
TJ,TSTG
-55to+150
Note:
1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
4.The typical data above is for referenceonly.
Dimensions in inches and (millimeters)
SMAF
0.193(4.90)
0.173(4.40)
0.047(1.20)
0.031(0.80)
0.008(0.20)
0.005(0.12)
0.047(1.20)
0.035(0.90)
0.146(3.70)
0.130(3.30)
0.063 (1.60)
0.051 (1.30)
0.106(2.70)
0.094(2.40)


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