PMWD30UN datasheet(7/12 Pages) PHILIPS

tên linh kiện	PMWD30UN

Giải thích chi tiết về linh kiện	Dual uTrenchMOS ultra low level FET

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nhà sản xuất	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PMWD30UN

Dual

µTrenchMOS™ ultra low level FET

Product data

Rev. 01 — 22 January 2003

7 of 12

9397 750 10835

ID = 1 mA; VDS =VGS

Tj =25 °C; VDS =5V

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

VGS = 0 V; f = 1 MHz

Tj =25 °C and 150 °C; VGS =0V

Fig 11. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

03aj65

0.2

0.4

0.6

0.8

-60

120

180

Tj (°C)

VGS(th)

(V)

min

typ

03aj64

10-6

10-5

10-4

10-3

0.2

0.4

0.6

0.8

VGS (V)

(A)

min

typ

003aaa279

10-1

110

102

(pF)

102

103

104

Ciss

Coss

Crss

VDS (V)

003aaa280

0.2

0.4

0.6

0.8

VSD (V)

(A)

Tj = 25

°C

150

°C

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