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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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MGSF2P02HDT3 bảng dữ liệu(PDF) 3 Page - ON Semiconductor |
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MGSF2P02HDT3 bảng dữ liệu(HTML) 3 Page - ON Semiconductor |
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3 / 8 page  MGSF2P02HD http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 20 − − Vdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 10 mA Gate−to−Source Leakage Current (VGS = ± 9.0 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Temperature Coefficient (Negative) VGS(th) 0.7 − 0.95 2.2 1.4 − Vdc mV/ °C Drain−to−Source On−Voltage (VGS = 4.5 Vdc, ID = 1.3 Adc) (VGS = 2.7 Vdc, ID = 0.8 Adc) RDS(on) − − 145 220 175 280 m W Forward Transconductance (VDS = 10 Vdc, ID = 0.6 Adc) gFS 1.3 2.0 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 15 Vd V 0Vd Ciss − 225 − pF Output Capacitance (VDS = 15 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 150 − Transfer Capacitance f = 1.0 MHz) Crss − 60 − SWITCHING CHARACTERISTICS Turn−On Delay Time td(on) − 15 − nsec Rise Time (VDS = 10 Vdc, ID = 1.2 Adc, VGS =45Vdc tr − 27 − Turn−Off Delay Time VGS = 4.5 Vdc, RG = 6.0 Ω) td(off) − 60 − Fall Time RG 6.0 Ω) tf − 72 − Turn−On Delay Time td(on) − 20 − Rise Time (VDD = 10 Vdc, ID = 0.6 Adc, VGS =27Vdc tr − 94 − Turn−Off Delay Time VGS = 2.7 Vdc, RG = 6.0 Ω) td(off) − 49 − Fall Time RG 6.0 Ω) tf − 76 − Gate Charge QT − 5.3 7.5 nC (VDS = 16 Vdc, ID = 1.2 Adc, Q1 − 0.7 − (VDS 16 Vdc, ID 1.2 Adc, VGS = 4.5 Vdc) Q2 − 2.6 − Q3 − 1.9 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 1.2 Adc, VGS = 0 Vdc) VSD − − 0.89 0.72 1.1 − Vdc Reverse Recovery Time t 86 nsec Reverse Recovery Time trr − 86 − nsec (IS = 1.2 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) ta − 27 − dIS/dt = 100 A/ms) tb − 59 − QRR − 0.115 − mC NOTE: Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. |
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