IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

I

140

mS

C

iss

60

pF

C

oss

V

GS

= 0 V, V

7.5

pF

C

rss

1.8

pF

t

d(on)

12

ns

t

r

V

GS

= 10 V, V

12

ns

t

d(off)

R

28

ns

t

f

28

ns

Q

g(on)

8nC

Q

gs

V

GS

= 10 V, V

V

1.8

nC

Q

gd

3nC

R

thJC

3

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

SD

I

1.8

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

1.5

µs

V

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

2.19

2.38

.086

.094

A1

0.89

1.14

0.35

.045

b

0.64

0.89

.025

.035

b1

0.76

1.14

.030

.045

b2

5.21

5.46

.205

.215

c

0.46

0.58

.018

.023

c1

0.46

0.58

.018

.023

D

5.97

6.22

.235

.245

E

6.35

6.73

.250

.265

e

2.28

BSC

.090

BSC

e1

4.57

BSC

.180

BSC

H

17.02

17.78

.670

.700

L

8.89

9.65

.350

.380

L1

1.91

2.28

.075

.090

L2

0.89

1.27

.035

.050

L3

1.15

1.52

.045

.060

1. Gate

2. Drain

3. Source

4. Drain

Back heatsink

TO-251 AA Outline

IXTU 01N100

IXTY 01N100

TO-252 AA

Dim.

Millimeter

Inches

Min. Max.

Min.

Max.

A

2.19 2.38

0.086

0.094

A1

0.89 1.14

0.035

0.045

A2

0 0.13

0

0.005

b

0.64 0.89

0.025

0.035

b1

0.76 1.14

0.030

0.045

b2

5.21 5.46

0.205

0.215

c

0.46 0.58

0.018

0.023

c1

0.46 0.58

0.018

0.023

D

5.97 6.22

0.235

0.245

D1

4.32 5.21

0.170

0.205

E

6.35 6.73

0.250

0.265

E1

4.32 5.21

0.170

0.205

e

2.28 BSC

0.090 BSC

e1

4.57 BSC

0.180 BSC

H

9.40 10.42

0.370

0.410

L

0.51 1.02

0.020

0.040

L1

0.64 1.02

0.025

0.040

L2

0.89 1.27

0.035

0.050

L3

2.54 2.92

0.100

0.115

1 Anode

2 NC

3 Anode

4 Cathode