PMEG2002ESF datasheet(3/13 Pages) NEXPERIA

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Nexperia

PMEG2002ESF

20 V, 0.2 A low VF MEGA Schottky barrier rectifier

PMEG2002ESF

All information provided in this document is subject to legal disclaimers.

Product data sheet

10 March 2017

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

[1]

950

junction temperature

125

°C

Tamb

ambient temperature

-55

125

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm2 each.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1] [2] -

310

K/W

[1] [3] -

190

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[1] [4] -

105

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

[5]

K/W

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a

significant part of the total power losses.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm2 each.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[5] Soldering point of cathode tab.

aaa-006823

tp (s)

10-3

102

103

10-2

10-1

102

103

Zth(j-a)

(K/W)

duty cycle =

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

FR4 PCB, standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

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