PSMN014-60LS datasheet(3/15 Pages) NEXPERIA

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PSMN014-60LS

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Product data sheet

Rev. 3 — 8 December 2011

2 of 14

NXP Semiconductors

PSMN014-60LS

N-channel DFN3333-8 60 V 14 m

Ω standard level MOSFET

Pinning information

Ordering information

Limiting values

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

source

SOT873-1 (DFN3333-8)

source

gate

5,6,7,8

drain

mounting base; connected to drain

1 234

8 765

Transparent

top view

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN014-60LS

DFN3333-8

plastic thermal enhanced very thin small outline package; no

leads; 8 terminals

SOT873-1

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 150 °C

VDGR

drain-gate voltage

Tj ≤ 150 °C; Tj ≥ 25 °C; RGS =20kΩ

-60

VGS

gate-source voltage

-20

drain current

VGS =10V; Tmb = 100 °C; see Figure 1

-28

VGS =10V; Tmb =25 °C; see Figure 1

-40

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb =25°C;

see Figure 3

180

Ptot

total power dissipation

Tmb =25 °C; see Figure 2

-65

Tstg

storage temperature

-55

150

°C

junction temperature

-55

150

°C

Tsld(M)

peak soldering temperature

260

°C

Source-drain diode

source current

Tmb =25 °C

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

180

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

VGS =10V; Tj(init) =25°C; ID =40A;

Vsup ≤ 60 V; unclamped; RGS =50 Ω

-42

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