BCR8UM datasheet(2/5 Pages) MITSUBISHI

tên linh kiện	BCR8UM

Giải thích chi tiết về linh kiện	MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

PDF	5 Pages

Scroll/Zoom	100%

nhà sản xuất	MITSUBISHI [Mitsubishi Electric Semiconductor]

Trang chủ	http://www.mitsubishichips.com

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2 / 5 page

Feb.1999

100

5 7 101

5 7 102

100

3.8

0.6

100

102

101

10–1

3.4

3.0

2.6

2.2

1.8

1.4

1.0

Tj = 25°C

Tj = 125°C

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR8UM

MEDIUM POWER USE

INSULATED TYPE, GLASS PASSIVATION TYPE

Symbol

IDRM

VTM

VFGT !

VRGT !

VRGT #

IFGT !

IRGT !

IRGT #

VGD

Rth (j-c)

Test conditions

Tj=125

°C, VDRM applied

Tc=25

°C, ITM=12A, Instantaneous measurement

Tj=25

°C, VD=6V, RL=6Ω, RG=330Ω

Tj=25

°C, VD=6V, RL=6Ω, RG=330Ω

Tj=125

°C, VD=1/2VDRM

Junction to case V3 V4

Unit

°C/W

Typ.

—

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

Gate trigger current V2

Gate non-trigger voltage

Thermal resistance

ELECTRICAL CHARACTERISTICS

Limits

Min.

—

0.2

—

Max.

2.0

1.5

—

3.0

V2. Measurement using the gate trigger characteristics measurement circuit.

V3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.

V4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0

°C/W.

PERFORMANCE CURVES

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