EPC2016C datasheet(3/6 Pages) EPC

tên linh kiện	EPC2016C

Giải thích chi tiết về linh kiện	Enhancement Mode Power Transistor

PDF	6 Pages

Scroll/Zoom	100%

nhà sản xuất	EPC [Espros Photonics corp]

Trang chủ	http://www.espros.ch

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3 / 6 page

eGaN® FET DATASHEET

EPC2016C

| 3

TJ – Junction Temperature ( ˚C )

1.7

1.8

1.5

1.6

1.4

1.3

1.2

1.1

0.9

0.8

100

125

150

ID = 11 A

VGS = 5 V

Figure 8: Normalized On-State Resistance vs. Temperature

0.7

0.8

0.9

1.1

1.2

1.3

1.4

0.6

100

125

150

ID = 3 mA

Figure 9: Normalized Threshold Voltage vs. Temperature

TJ – Junction Temperature ( ˚C )

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

25˚C

125˚C

Figure 7: Reverse Drain-Source Characteristics

600

500

400

300

200

100

Figure 5a: Capacitance (Linear Scale)

100

1000

100

Figure 5b: Capacitance (Log Scale)

QG – Gate Charge (nC)

4.5

3.5

2.5

1.5

0.5

1.0

1.5

2.0

2.5

3.0

3.5

ID = 11 A

VDS= 50 V

Figure 6: Gate Charge

VDS – Drain-to-Source Voltage (V)

COSS = CGD+CSD

CISS = CGD+CGS

CRSS = CGD

COSS = CGD+CSD

CISS = CGD+CGS

CRSS = CGD

VSD – Source-to-Drain Voltage (V)

All measurements were done with substrate shortened to source.

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