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STM32L433CB bảng dữ liệu(PDF) 164 Page - STMicroelectronics

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Electrical characteristics
STM32L433xx
164/225
DS11449 Rev 5
Figure 31. ADC accuracy characteristics
THD
Total
harmonic
distortion
ADC clock frequency ≤
26 MHz,
1.65 V ≤ VDDA = VREF+ ≤
3.6 V,
Voltage scaling Range 2
Single
ended
Fast channel (max speed)
-
-71
-69
dB
Slow channel (max speed)
-
-71
-69
Differential
Fast channel (max speed)
-
-73
-72
Slow channel (max speed)
-
-73
-72
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.
Table 81. ADC accuracy - limited test conditions 4(1)(2)(3) (continued)
Sym-
bol
Parameter
Conditions(4)
Min Typ Max Unit
ET = total unajusted error: maximum deviation
between the actual and ideal transfer curves.
EO = offset error: maximum deviation
between the first actual transition and
the first ideal one.
EG = gain error: deviation between the last
ideal transition and the last actual one.
ED = differential linearity error: maximum
deviation between actual steps and the ideal ones.
EL = integral linearity error: maximum deviation
between any actual transition and the end point
correlation line.
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
4095
4094
4093
7
6
5
4
3
2
1
0
23
4
5
6
1
7
4093 4094 4095 4096
VDDA
VSSA
EO
ET
EL
EG
ED
1 LSB IDEAL
(1)
(3)
(2)
MS19880V2



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