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STM32L433CB bảng dữ liệu(PDF) 97 Page - STMicroelectronics

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STM32L433CB bảng dữ liệu(HTML) 97 Page - STMicroelectronics

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DS11449 Rev 5
97/225
STM32L433xx
Electrical characteristics
193
Vhyst_BOR_PVD
Hysteresis voltage of BORH
(except BORH0) and PVD
--
100
-
mV
IDD
(BOR_PVD)(2)
BOR(3) (except BOR0) and
PVD consumption from VDD
--
1.1
1.6
µA
VPVM1
VDDUSB peripheral voltage
monitoring
-
1.18
1.22
1.26
V
VPVM3
VDDA peripheral voltage
monitoring
Rising edge
1.61
1.65
1.69
V
Falling edge
1.6
1.64
1.68
VPVM4
VDDA peripheral voltage
monitoring
Rising edge
1.78
1.82
1.86
V
Falling edge
1.77
1.81
1.85
Vhyst_PVM3
PVM3 hysteresis
-
-
10
-
mV
Vhyst_PVM4
PVM4 hysteresis
-
-
10
-
mV
IDD (PVM1)
(2)
PVM1 consumption from VDD
--
0.2
-
µA
IDD
(PVM3/PVM4)
(2)
PVM3 and PVM4
consumption from VDD
--
2
-
µA
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.
Table 24. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit



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