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FC9931 bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

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FC9931 bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

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FC9931
2012. 10. 31
2/6
Revision No : 0
Absolute Maximum Ratings
VIN to GND ------------------------------------------------------------------- -0.5V to +470V
VDDto GND
-0.3V to +13,5V
CS1, CS2, PWM_D, GATE, RT to GND
-0.3V to (VDD + 0.3V)
Operating Temperature Range
-40°C to +85°C
Junction Temperature
Storage Temperature Range
-65°C to +150°C
Continuous Power Dissipation (Ta=+25°C) (Note 1)
16-Pin SO (derate 7.5mW/°C above +25°C)
8-Pin DIP (derate 9mW/°C above +25°C)
8-Pin SO (derate 6.3mW/°C above +25°C)
Stresses beyond those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note1: Also limited by package power dissipation limit, whichever is lower.
Electrical Characteristics (cont.) (The * denotes the specifications which apply over the full operating juction
temperature range of -40°C < T < +85°C, otherwise the specifications are at T = 25°C, VIN= 12V, unless otherwise noted)
Symbol Description
Min Typ Max Units Conditions
Input
VINDC Input DC supply voltage range*
8.0
-
450
V
DC input voltage
IINSD
Shut-Down mode supply current*
-
0.5
1
mA Pin PWM_D to GND
Internal Regulator
VDD
Internally regulated voltage
7.12
7.5 7.88
V
VIN = 8V, IDD(ext)=0,
GATE = 500pF, RT = 226KΩ
ΔVDD,line Line regulation of VDD
0
-
1.0
V VIN = 8 - 450V, IDD(ext) = 0,
GATE = 500pF, RT = 226kΩ
UVLO VDD undervoltage lockout
threshold
6.45
6.7 6.95
V
VIN rising
ΔUVLO VDD undervoltage lockout
hysteresis
-
500
-
mV ---
PWM Dimming
VPWMD(lo) PWM_D input low voltage
1.0
V
VIN = 8-450V
VPWMD(hi) PWM_D input high voltage
2.4
V
VIN = 8-450V
RPWMD PWM_D pull-down resistance
50
100 150
kΩ
VPWMD = 5V
GATE
VGATE(hi) GATE high output voltage*
VDD-
0.3
-
VDD
V
IGATE = -10 mA, VDD = 7.5V, VIN open
VGATE(lo) GATE low output voltage
0
-
0.3
V
IGATE = 10 mA VDD = 7.5V, VIN open
TRISE
GATE output rise time
-
30
50
ns CGATE = 500рF, VDD = 7.5V, VIN open
TFALL GATE output fall time
-
30
50
ns CGATE = 500pF, VDD = 7.5V, VIN open
TDELAY Delay from CS trip to GATE
-
150 300
ns VCS1, VCS2 = -100mV
TBLANK Blanking delay
150
215 280
ns VCS1, VCS2 = -100mV
Oscillator
FOSC
Oscillator frequency
80
100 120 kHz RT = 226 kΩ
Comparators
TOFFSET1
TOFFSET2 Comparator input offset voltage*
-15
-
15
mV ---
-------------------------------------------------------------------
-------------------------------
-------------------------------
+125°C
-------------------------------
-------------------------------
750mW
900mW
630mW
-------------------------------
-------------------------------
-------------------------------



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