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2N4403 bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

tên linh kiện 2N4403
Giải thích chi tiết về linh kiện  General Purpose Transistors
PDF  6 Pages
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nhà sản xuất  FS [First Silicon Co., Ltd]
Trang chủ  http://www.firstsilicon.co.kr/
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2N4403 bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

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ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
h
n
i
a
G
t
n
e
rr
u
C
C
D
FE
––
(I C = –0.1 mAdc, V CE
–
–
0
3
)
c
d
V
0
.
1
–
=
(I C = –1.0 mAdc, V CE
–
–
0
6
)
c
d
V
0
.
1
–
=
(I C = –10 mAdc, V CE
–
–
0
0
1
)
c
d
V
0
.
1
–
=
(I C = –150 mAdc, V CE
0
0
3
0
0
1
)
3
()
c
d
V
0
.
2
–
=
(I C = –500 mAdc, V CE
–
–
0
2
)
3
()
c
d
V
0
.
2
–
=
Collector–Emitter Saturation Voltage(3)
VCE(sat)
Vdc
(I C = –150mAdc, I B
4
.
0
–
–
–
)
c
d
A
m
5
1
–
=
(I C = –500 mAdc, I B
5
7
.
0
–
–
–
)
c
d
A
m
0
5
–
=
Base–Emitter Saturation Voltage (3)
V BE(sat)
Vdc
(I C = –150 mAdc, I B
5
9
.
0
–
5
7
.
0
–
)
c
d
A
m
5
1
–
=
(I C = –500 mAdc, I B
3
.
1
–
–
–
)
c
d
A
m
0
5
–
=
SMALL–SIGNAL CHARACTERISTICS
f
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
—
n
i
a
G
–
t
n
e
rr
u
C
T
MHz
(I C = –20mAdc, V CE
–
–
0
0
2
)
z
H
M
0
0
1
=
f
,
c
d
V
0
1
–
=
C
e
c
n
a
ti
c
a
p
a
C
e
s
a
B
–
r
o
t
c
e
ll
o
C
cb
pF
(V CB= –10 Vdc, I E
5
.
8
–
–
)
z
H
M
0
.
1
=
f
,
0
=
C
e
c
n
a
ti
c
a
p
a
C
e
s
a
B
–
r
e
tt
i
m
E
eb
pF
(V BE = –0.5 Vdc, I C
0
3
–
–
)
z
H
M
0
.
1
=
f
,
0
=
h
e
c
n
a
d
e
p
m
I
t
u
p
n
I
ie
kΩ
(V CE= –10 Vdc, I C
5
1
5
.
1
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
–
=
h
o
it
a
R
k
c
a
b
d
e
e
F
e
g
a
tl
o
V
re
X 10 –4
(V CE= –10 Vdc, I C
0
.
8
1
.
0
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
–
=
h
n
i
a
G
t
n
e
rr
u
C
l
a
n
g
i
S
–
ll
a
m
S
fe
—
(V CE= –10 Vdc, I C
0
0
5
0
6
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
–
=
h
e
c
n
a
tt
i
m
d
A
t
u
p
t
u
O
oe
µ
mhos
(V CE= –10 Vdc, I C
0
0
1
0
.
1
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
–
=
SWITCHING CHARACTERISTICS
Delay Time
(V CC = – 30 Vdc, V EB = –2.0 Vdc,
t d
—
15
Rise Time
I C = –150mAdc, I B1 = –15 mAdc)
t d
—
20
ns
Storage Time
(V CC = –30 Vdc, I C = –150 mAdc,
t s
—
225
ns
Fall Time
I B1 = I B2 = –15 mAdc)
t f
—
30
Figure 1. Turn–On Time
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
1.0 k
– 30 V
200
C
S*< 10 pF
1.0 k
– 30 V
200
C
S* < 10 pF
1N916
–16 V
–16 V
< 20 ns
<2.0 ns
+2.0V
+ 14V
Figure 2. Turn–Off Time
1.0 to 100µs,
DUTY CYCLE = 2%
SWITCHING TIME EQUIVALENT TEST CIRCUITS
0
0
1 0 to 100µs,
DUTY CYCLE = 2%
+4.0 V
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
2008. 08. 08
2/6
Revision No : 0
SEMICONDUCTOR
TECHNICAL DATA
2N4403



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