IXSP10N60B2D1 datasheet(6/6 Pages) IXYS

6 / 6 page

IXSA 10N60B2D1

IXSP 10N60B2D1

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,381,025

6,162,665

6,306,728 B1 6,534,343

6,683,344

one or moreof the following U.S. patents:

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,486,715

6,259,123B1 6,404,065B1 6,583,505

6,710,405B2

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 20. Peak reverse current I

versus -di

F/dt

Fig. 19. Reverse recovery charge Q

versus -di

F/dt

Fig. 18. Forward current I

F versus VF

Fig. 21. Dynamic parameters Q

r, IRM

versus T

Fig. 22. Recovery time t

rr versus -diF/dt

Fig. 23. Peak forward voltage V

FR and

fr versus diF/dt

Fig. 24. Transient thermal resistance junction-to-case

Constants for Z

thJC calculation:

thi (K/W)

i (s)

1.449

0.0052

0.5578

0.0003

0.4931

0.0169

NOTE: Fig. 19 to Fig. 23 shows typical values

200

600

1000

0400

800

100

0.00001

0.0001

0.001

0.01

0.1

0.001

0.01

0.1

040

120

160

0.0

0.5

1.0

1.5

2.0

-di

F/dt

K/W

200

400

600

800 1000

0.0

0.1

0.2

0.3

F/dt

200

600

1000

0400

800

100

1000

100

150

200

250

0123

-di

F/dt

-di

F/dt

µs

thJC

µs

VJ = 150°C

VJ = 100°C

VJ = 25°C

VJ = 100°C

R = 300 V

VJ = 100°C

R = 300 V

VJ = 100°C

R = 300 V

DSEP 8-06B

F =

5 A

F = 10 A

F = 20 A

F =

5 A

F = 10 A

F = 20 A

F =

5 A

F = 10 A

F = 20 A

VJ = 100°C

F = 10 A

IXSP10N60B2D1 bảng dữ liệu(PDF) 6 Page - IXYS Corporation

IXSP10N60B2D1 bảng dữ liệu(HTML) 6 Page - IXYS Corporation

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL