DTC109 datasheet(2/4 Pages) FS

2 / 4 page

DEVICE MARKING AND RESISTOR VALUES

Device

Package

Marking

R1 (K)

R2 (K)

DTC109

SOT-23

3. New devices. Updated curves to follow in subsequent data sheets.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 40 V, IE = 0)

ICBO

–

nAdc

Collector-Emitter Cutoff Current (VCE = 40 V, IB = 0)

ICEO

–

nAdc

Emitter-Base Cutoff Current

(VBE = 6.0 V, IC = 0)

IEBO

–

0.13

mAdc

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)

V(BR)CBO

–

Vdc

Collector-Emitter Breakdown Voltage (Note 4)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

–

Vdc

ON CHARACTERISTICS (Note 4)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

hFE

140

–

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA)

VCE(sat)

–

0.25

Vdc

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)

VOL

–

0.2

Vdc

4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

Output Voltage (on)

Input Resistor

kΩ

Resistor Ratio

R1/R2

1.7

2.1

2.6

Figure 1. Derating Curve

350

200

150

100

–50

100

150

TA, AMBIENT TEMPERATURE (°C)

RθJA = 370°C/W

250

A8P

32.9

61.1

2010. 4. 22

2/4

Revision No : 0

DTC109

DTC109 bảng dữ liệu(PDF) 2 Page - First Silicon Co., Ltd

DTC109 bảng dữ liệu(HTML) 2 Page - First Silicon Co., Ltd

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL