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S29AL008D70BAI011 bảng dữ liệu(PDF) 49 Page - SPANSION

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Giải thích chi tiết về linh kiện  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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June 16, 2005 S29AL008D_00A3
S29AL008D
49
Da t a
S h ee t
AC Characteristics
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
Erase and Programming Performance
Parameter
Typ Note 1
Max Note 2
Unit
Comments
Sector Erase Time
0.7
10
s
Excludes 00h programming
prior to erasure
Chip Erase Time
14
s
Byte Programming Time
7
210
µs
Excludes system level
overhead Note 5
Word Programming Time
7
210
µs
Chip Programming Time
Note 3
Byte Mode
8.4
25
s
Word Mode
5.8
17
s
tGHEL
tWS
OE#
CE#
WE#
RESET#
tD
Data
tAH
Addresses
tD
tCP
DQ7
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tR
tWHWH1 or
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUS
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data
written to the device.
2. Figure indicates the last two bus cycles of command sequence.
3. Word mode address used as an example.
Figure 24. Alternate CE# Controlled Write Operation Timings



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