IRF7326D2 datasheet(2/8 Pages) IRF

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IRF7326D2

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Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-30

—

VGS = 0V, ID = -250µA

RDS(on)

Static Drain-to-Source On-Resistance

—

0.073 0.10

VGS = -10V, ID = -1.8A

—

0.13 0.16

VGS = -4.5V, ID = -1.5A

VGS(th)

Gate Threshold Voltage

-1.0

—

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

2.5

—

VDS = -24V, ID = -1.8A

IDSS

Drain-to-Source Leakage Current

—

-1.0

VDS = -24V, VGS = 0V

—

-25

VDS = -24V, VGS = 0V, TJ = 55°C

IGSS

Gate-to-Source Forward Leakage

—

100

VGS = -20V

Gate-to-Source Reverse Leakage

—

-100

VGS = 20V

Total Gate Charge

—

ID = -1.8A

Qgs

Gate-to-Source Charge

—

2.9

VDS = -24V

Qgd

Gate-to-Drain ("Miller") Charge

—

9.0

VGS = -10V (see figure 6)

td(on)

Turn-On Delay Time

—

VDD = -15V

Rise Time

—

ID = -1.8A

td(off)

Turn-Off Delay Time

—

RG = 6.0Ω

Fall Time

—

RD = 8.2Ω

Ciss

Input Capacitance

—

440

—

VGS = 0V

Coss

Output Capacitance

—

200

—

VDS = -25V

Crss

Reverse Transfer Capacitance

—

ƒ = 1.0MHz (see figure 5)

MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Ω

µA

Parameter

Min. Typ.

Max.

Units

Conditions

Continuous Source Current (Body Diode) —

—

-2.5

ISM

Pulsed Source Current (Body Diode)

—

-29

VSD

Body Diode Forward Voltage

—

-1.0

TJ = 25°C, IS = -1.8A, VGS = 0V

trr

Reverse Recovery Time (Body Diode)

—

TJ = 25°C, IF = -1.8A

Qrr

Reverse Recovery Charge

—

di/dt = 100A/µs

MOSFET Source-Drain Ratings and Characteristics

Parameter

Max. Units

Conditions

If (av)

Max. Average Forward Current

2.8

50% Duty Cycle. Rectangular Wave, Tc = 25°C

1.8

50% Duty Cycle. Rectangular Wave, Tc = 70°C

ISM

Max. peak one cycle Non-repetitive

200

5µs sine or 3µs Rect. pulse

Following any rated

Surge current

10ms sine or 6ms Rect. pulse load condition &

with Vrrm applied

Schottky Diode Maximum Ratings

Parameter

Max. Units

Conditions

Vfm

Max. Forward voltage drop

0.57

If = 3.0, Tj = 25°C

0.77

If = 6.0, Tj = 25°C

0.52

If = 3.0, Tj = 125°C

0.79

If = 6.0, Tj = 125°C

Irm

Max. Reverse Leakage current

0.30

Vr = 30V

Tj = 25°C

Tj = 125°C

Max. Junction Capacitance

310

Vr = 5Vdc ( 100kHz to 1 MHz) 25°C

dv/dt

Max. Voltage Rate of Charge

4900 V/µs

Rated Vr

Schottky Diode Electrical Specifications

( HEXFET is the reg. TM for International Rectifier Power MOSFET's )

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