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SSM3K72KCT bảng dữ liệu(PDF) 3 Page - Toshiba Semiconductor |
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SSM3K72KCT bảng dữ liệu(HTML) 3 Page - Toshiba Semiconductor |
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3 / 8 page ![]() SSM3K72KCT 3 5. 5. 5. 5. Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics 5.1. 5.1. 5.1. 5.1. Static Characteristics (Unless otherwise specified, T Static Characteristics (Unless otherwise specified, T Static Characteristics (Unless otherwise specified, T Static Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Forward transfer admittance (Note 1) (Note 1) Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) |Yfs| Test Condition VDS = 0 V, VGS = ±16 V VDS = 60 V, VGS = 0 V ID = 250 µA, VGS = 0 V VDS = VGS, ID = 250 µA ID = 100 mA, VGS = 4.5 V ID = 100 mA, VGS = 5.0 V ID = 100 mA, VGS = 10 V VDS = 10 V, ID = 200 mA Min 60 1.1 Typ. 1.2 1.15 1.05 1 Max ±10 1 2.1 1.75 1.65 1.5 Unit µA V Ω S Note 1: Pulse measurement. 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (Unless otherwise specified, T Dynamic Characteristics (Unless otherwise specified, T Dynamic Characteristics (Unless otherwise specified, T Dynamic Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on delay time) Switching time (fall time) Switching time (turn-off delay time) Symbol Ciss Crss Coss tr td(on) tf td(off) Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 30 V, ID = 200 mA, VGS = 0 to 10 V, RG = 50 Ω Duty ≤ 1%, VIN: tr, tf < 5 ns, Common source, See Chapter 5.3. Min Typ. 26 1.3 5.5 3.6 5.5 17 38 Max 40 11 90 Unit pF ns 5.3. 5.3. 5.3. 5.3. Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Fig. Fig. Fig. Fig. 5.3.1 5.3.1 5.3.1 5.3.1 Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Fig. Fig. Fig. Fig. 5.3.2 5.3.2 5.3.2 5.3.2 Input Waveform/Output Waveform Input Waveform/Output Waveform Input Waveform/Output Waveform Input Waveform/Output Waveform 5.4. 5.4. 5.4. 5.4. Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain charge Symbol Qg Qgs Qgd Test Condition VDD = 30 V, ID = 200 mA, VGS = 4.5 V Min Typ. 0.39 0.2 0.11 Max 0.6 Unit nC 2016-02-12 Rev.1.0 ©2016 Toshiba Corporation |
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