SSM3K37CT datasheet(1/5 Pages) TOSHIBA

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SSM3K37CT

2014-03-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K37CT

○

High Speed Switching Applications

○

Analog Switch Applications

• 1.5Vdrive

• Low ON-resistance

RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V)

RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V)

RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V)

RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

VDSS

20

V

Gate-Source voltage

VGSS

± 10

V

DC

ID

200

Drain current

Pulse

IDP

400

mA

Power dissipation

PD(Note1)

100

mW

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(10 mm

× 10 mm × 1.0 mm, Cu Pad: 100 mm2)

Marking(top view)

Pin Condition (top view)

Equivalent Circuit

Unit : mm

JEDEC

―

JEITA

―

TOSHIBA

2-1J1B

Weight: 0.75mg(typ.)

1. Gate

2. Source

3. Drain

*Electrodes: On the bottom

Polarity mark

Polarity mark (on the top)

1

2

3

SU

1

2

3

CST3

Start of commercial production

2010-11

Số phần tương tự - SSM3K37CT

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