2SC5804 datasheet(1/2 Pages) ISAHAYA

tên linh kiện	2SC5804

Giải thích chi tiết về linh kiện	SMALL-SIGNAL TRANSISTOR

PDF	2 Pages

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nhà sản xuất	ISAHAYA [Isahaya Electronics Corporation]

Trang chủ	http://www.idc-com.co.jp

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DESCRIPTION

2SC5804 is a super mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for low frequency application.

Since it is a super-thin flat lead type package,a high-density

mounting are possible.

Complementary with 2SC3052.

FEATURE

●Super-thin flat lead type package. t=0.45mm

●Excellent linearly of DC forward current gain.

●Low collector to emitter saturation voltage

VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)

APPLICATION

For hybrid IC,small type machine low frequency voltage amplify

application.

※ It shows hFE classification in below table.

〈SMALL-SIGNAL TRANSISTOR〉

PRELIMINARY

2SC5804

Notics:This is not a final specification.

FOR LOW FREQUENCY AMPLIFY APPLICATION

Some parametric limits are subject to change.

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

Unit：ｍｍ

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

V

CBO

Collector to Base voltage

50

V

CEO

Collector to Emitter voltage

6

V

EBO

Emitter to Base voltage

50

V

I

O

Collector current

200

mA

P

c

Collector dissipation

100

mW

T

j

Junction temperature

＋125

℃

T

stg

Storage temperature

-55∼＋125

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Min

Typ

Max

Collector to Emitter Breakdown voltage

V(BR)CEO

I

C=100μA, R BE=∞

50

―

V

Collector cut off current

ICBO

V

CB=50V, I E=0mA

-

0.1

μA

Emitter cut off current

IEBO

V

EB=6V, I C=0mA

-

0.1

μA

DC forward current gain

hFE

V

CE=6V, I C=1mA

150

※

800

-

DC forward current gain

hFE

V

CE=6V, I C=0.1mA

90

-

C to E saturation voltage

VCE(sat)

I

C=100mA, I B=10mA

-

0.3

v

Gain bandwidth product

fT

V

CE=6V, I E=-10mA

-

200

-

MHz

Collector output capacitance

Cob

V

CB=6V, I E=0mA,f=1MHz

-

2.5

-

pF

Noise figure

NF

V

CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ

-

15

dB

JEITA：

TERMINAL CONNECTER

①：BASE

②：EMITTER

③：COLLECTOR

0.2

0.8

0.2

①

②

③

ISAHAYA ELECTRONICS CORPORATION

Item

E

F

G

hFE

150∼300

250∼500

400∼800

Abbrivation

LE

LF

LG

Số phần tương tự - 2SC5804

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Renesas Technology Corp	2SC5800	109Kb / 24P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE July 2001
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	2SC5800	259Kb / 18P	NPN SILICON RF TWIN TRANSISTOR 2002
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	2SC5800	206Kb / 9P	NPN SILICON RF TWIN TRANSISTOR 2003

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