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TLMB1100-GS08 bảng dữ liệu(PDF) 2 Page - HK TO-GRACE TECHNOLOGY CO.,LTD.

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TLMB1100-GS08 bảng dữ liệu(HTML) 2 Page - HK TO-GRACE TECHNOLOGY CO.,LTD.

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TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100
www.vishay.com
Vishay Semiconductors
Rev. 2.8, 30-Nov-16
2
Document Number: 83173
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Driving the LED in reverse direction is suitable for short term application
Note
(1) Driving the LED in reverse direction is suitable for short term application
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage (1)
VR
12
V
DC forward current
Tamb
≤ 75 °C
IF
30
mA
Surge forward current
tp
≤ 10 μs
IFSM
0.5
A
Power dissipation
PV
90
mW
Junction temperature
Tj
+120
°C
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg
-40 to +100
°C
Soldering temperature
acc. Vischay specification
Tsd
+260
°C
Thermal resistance junction/ambient
mounted on PC board (pad size > 5 mm2)RthJA
480
K/W
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLMB1100
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage (1)
VR
5V
DC forward current
Tamb
≤ 60 °C
IF
15
mA
Surge forward current
tp
≤ 10 μs
IFSM
0.1
A
Power dissipation
PV
68
mW
Junction temperature
Tj
+100
°C
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg
-40 to +100
°C
Soldering temperature
acc. Vischay specification
Tsd
+260
°C
Thermal resistance junction/ambient
mounted on PC board (pad size > 5 mm2)RthJA
480
K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TLMS1100, RED
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Luminous intensity
IF = 20 mA
lV
32
63
-
mcd
Dominant wavelength
IF = 20 mA
λd
627
633
639
nm
Peak wavelength
IF = 20 mA
λp
-
645
-
nm
Angle of half intensity
IF = 20 mA
ϕ
-± 80
-
deg
Forward voltage
IF = 20 mA
VF
-2.1
3.0
V
Reverse voltage
IR = 10 μA
VR
6-
-
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
-15
-
pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TLMO1100, ORANGE
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Luminous intensity
IF = 20 mA
lV
50
80
-
mcd
Dominant wavelength
IF = 20 mA
λd
600
606
609
nm
Peak wavelength
IF = 20 mA
λp
-
610
-
nm
Angle of half intensity
IF = 20 mA
ϕ
-± 80
-
deg
Forward voltage
IF = 20 mA
VF
-2.1
3.0
V
Reverse voltage
IR = 10 μA
VR
6-
-
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
-15
-
pF



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