7-191

7

VN1304

VN1306

VN1310

N-Channel Enhancement-Mode

Vertical DMOS FETs

BV

I

D(ON)

Order Number / Package

BV

DGS

(max)

(min)

TO-39

TO-92

40V

8.0

Ω

0.5A

—

—

60V

8.0

Ω

0.5A

VN1306N2

—

100V

8.0

Ω

0.5A

—

VN1310N3

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Note: See Package Outline section for dimensions.

Package Options

Features

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Applications

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

BV

DSS

Drain-to-Gate Voltage

BV

DGS

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55

°C to +150°C

Soldering Temperature*

300

°C

* Distance of 1.6 mm from case for 10 seconds.

S G D

D G S

TO-39

TO-92

Ordering Information

Case: DRAIN