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KMM372V413CS bảng dữ liệu(PDF) 3 Page - Samsung semiconductor

tên linh kiện KMM372V413CS
Giải thích chi tiết về linh kiện  4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V
PDF  19 Pages
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nhà sản xuất  SAMSUNG [Samsung semiconductor]
Trang chủ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM372V413CS bảng dữ liệu(HTML) 3 Page - Samsung semiconductor

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DRAM MODULE
KMM372V413CK/CS
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one page mode cycle,
tPC.
* NOTE :
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
ICC1*
ICC2
ICC3*
ICC4*
ICC5
ICC6*
II(L)
IO(L)
VOH
VOL
Symbol
Speed
KMM372V413CK/CS
Unit
Min
Max
ICC1
-5
-6
-
-
999
909
mA
mA
ICC2
Don
′t care
-
100
mA
ICC3
-5
-6
-
-
999
909
mA
mA
ICC4
-5
-6
-
-
819
729
mA
mA
ICC5
Don
′t care
-
30
mA
ICC6
-5
-6
-
-
999
909
mA
mA
II(L)
IO(L)
Don
′t care
-90
-10
90
9
uA
uA
VOH
VOL
Don
′t care
2.4
-
-
0.4
V
V
: Operating Current * (RAS, CAS, Address cycling @
tRC=min)
: Standby Current (RAS=CAS=W=VIH)
: RAS Only Refresh Current * (CAS=VIH, RAS cycling @
tRC=min)
: Fast Page Mode Current * (RAS=VIL, CAS cycling :
tPC=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
tRC=min)
: Input Leakage Current (Any input 0
≤VIN≤Vcc+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤VOUT≤Vcc)
: Output High Voltage Level (IOH = -2mA)
: Output Low Voltage Level (IOL = 2mA)
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70
°C)
*1 : VCC+1.3V/15ns, Pulse width is measured at VCC.
*2 : -1.3V/15ns, Pulse width is measured at VSS.
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
VSS
VIH
VIL
3.0
0
2.0
-0.3*2
3.3
0
-
-
3.6
0
VCC+0.3*1
0.8
V
V
V
V
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
Rating
Unit
Voltage on any pin relative VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
PD
IOS
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
18
50
V
V
°C
W
mA



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