FMBA06 datasheet(3/7 Pages) ONSEMI

3 / 7 page

Electrical Characteristics

= 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

V(BR)CEO

Collector-Emitter Sustaining Voltage*

IC = 1.0 mA, IB = 0

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 100

µA, IC = 0

4.0

ICEO

Collector-Cutoff Current

VCE = 60 V, IB = 0

0.1

µA

ICBO

Collector-Cutoff Current

VCB = 80 V, IE = 0

0.1

µA

ON CHARACTERISTICS

hFE

DC Current Gain

IC = 10 mA, VCE = 1.0 V

IC = 100 mA, VCE = 1.0 V

100

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 100 mA, IB = 10 mA

0.25

VBE(on)

Base-Emitter On Voltage

IC = 100 mA, VCE = 1.0 V

1.2

SMALL SIGNAL CHARACTERISTICS

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Current Gain - Bandwidth Product

IC = 10 mA, VCE = 2.0 V,

f = 100 MHz

100

MHz

Spice Model

NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0

Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5

Vtf=4 Xtf=6 Rb=10)

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

0.001

0.01

0.1

100

150

200

- COLLECTOR CURRENT (A)

- 40 °C

25 °C

= 1V

125 °C

Collector-Emitt er Saturation

Voltage vs Collect or Curre nt

0.1

100

1000

0.1

0.2

0.3

0.4

0.5

I - COLLECTOR CURRE NT (mA)

β = 10

- 40 °C

25 °C

125 °C

NPN Multi-Chip General Purpose Amplifier

(continued)

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