FMB2227A datasheet(3/6 Pages) ONSEMI

3 / 6 page

Electrical Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Notes:

3. All voltages (V) and currents (A) are negative polarity for PNP transistors.

4. Pulse test: pulse width ≤ 300

μs, duty cycle ≤ 2.0%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown

Voltage(4)

IC = 10 mA, IB = 0

V(BR)CBO

Collector-Base Breakdown

Voltage

IC = 10 μA, IE = 0

V(BR)EBO

Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0

ICBO

Collector Cut-Off Current

VCB = 50 V, IE = 0

IEBO

Emitter Cut-Off Current

VEB = 3.0 V, IC = 0

ON CHARACTERISTICS

hFE

DC Current Gain

IC = 1.0 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V(4)

100

IC = 300 mA, VCE = 10 V(4)

VCE(sat)

Collector-Emitter Saturation

Voltage(4)

IC = 150 mA, IB = 15 mA

0.4

IC = 300 mA, IB = 30 mA

1.4

VBE(sat)

Base-Emitter Saturation

Voltage(4)

IC = 150 mA, IB = 15 mA

1.3

SMALL SIGNAL CHARACTERISTICS

Current Gain - Bandwidth Product

IC = 50 mA, VCE = 20 V,

f = 100 MHz

250

MHz

Cobo

Output Capacitance

VCB = 10 V, IE = 0, f = 100 kHz

4.0

Cibo

Input Capacitance

VEB = 2.0 V, IC = 0, f = 100 kHz

Noise Figure

IC = 100 μA, VCE = 10 V,

RS = 1.0 kΩ, f = 1.0 kHz

2.0

SWITCHING CHARACTERISTICS

ton

Turn-on Time

VCC = 30 V, IC = 150 mA,

IB1 = 15 mA

Delay Time

8.0

Rise Time

toff

Turn-off Time

VCC = 6.0 V, IC = 150 mA,

IB1 = IB2 = 15 mA

Storage Time

Fall Time

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