IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTU4N60P

IXTY4N60P

IXTA4N60P

IXTP4N60P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

2.8

4.6

S

C

iss

635

pF

C

oss

V

65

pF

C

rss

5.7

pF

Q

g(on)

13

nC

Q

gs

V

6

nC

Q

gd

4

nC

t

d(on)

25

ns

t

r

10

ns

t

d(off)

50

ns

t

f

20

ns

R

thJC

1.4

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

4

A

I

SM

Repetitive, Pulse Width Limited by T

JM

12

A

V

SD

I

1.5

V

t

rr

500

ns

I

OBSOLETE

IXTY4N60P

IXTA4N60P

IXTP4N60P