IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA08N120P

IXTP08N120P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note:

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

0.38

0.63

S

C

iss

333

pF

C

oss

V

20

pF

C

rss

4.7

pF

Q

g(on)

14.0

nC

Q

gs

V

2.0

nC

Q

gd

8.2

nC

t

d(on)

20

ns

t

r

26

ns

t

d(off)

55

ns

t

f

24

ns

R

thJC

2.5

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

0.8

A

I

SM

Repetitive, Pulse Width Limited by T

JM

2.4

A

V

SD

I

1.5

V

t

rr

900

ns

I

TO-220 Outline

1 - Gate

2,4 - Drain

3 - Source

E1

E

A

D1

D

Q

L1

oP

H1

A1

L

A2

D2

e

c

e1

e1

3X b2

e

3X b

EJECTOR

PIN

TO-263 Outline

1 - Gate

2,4 - Drain

3 - Source

C2

A

H

1

b

D

E

D1

E1

b2

L2

L1

2

3

4

L3

A2

A1

e

c

e

0



0.43 [11.0]

0.66 [16.6]

0.06 [1.6]

0.10 [2.5]

0.20 [5.0]

0.34 [8.7]

0.12 [3.0]