IXTP06N120P datasheet(4/5 Pages) IXYS

tên linh kiện	IXTP06N120P

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

nhà sản xuất	IXYS [IXYS Corporation]

Trang chủ	http://www.ixys.com

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4 / 5 page

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA06N120P

IXTP06N120P

IXYS REF: T_06N120P (1A) 5-18-16-C

Fig. 7. Transconductance

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.1

0.2

0.3

0.4

0.5

0.6

ID - Amperes

TJ = - 40

125

Fig. 8. Forward Voltage Drop of Intrinsic Diode

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

0.40

0.45

0.50

0.55

0.60

0.65

0.70

0.75

0.80

0.85

0.90

VSD - Volts

TJ = 25

TJ = 125

Fig. 9. Gate Charge

QG - NanoCoulombs

VDS = 600V

I D = 0.3A

I G = 1mA

Fig. 10. Capacitance

100

1,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal Impedance

0.1

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

Fig. 11. Forward-Bias Safe Operating Area

0.01

0.1

100

1,000

10,000

VDS - Volts

TJ = 150

TC = 25

Single Pulse

25μs

100μs

RDS(on) Limit

1ms

10ms

100ms

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