IXTP2R4N120P datasheet(4/6 Pages) IXYS

tên linh kiện	IXTP2R4N120P

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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nhà sản xuất	IXYS [IXYS Corporation]

Trang chủ	http://www.ixys.com

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4 / 6 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA2R4N120P IXTP2R4N120P

IXTH2R4N120P

IXYS REF: T_2R4N120P(3C) 4-02-08-A

Fig. 7. Input Admittance

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

4.8

5.2

5.6

6.0

6.4

VGS - Volts

TJ = 125

- 40

Fig. 8. Transconductance

0.4

0.8

1.2

1.6

2.4

2.8

3.2

3.6

0.4

0.8

1.2

1.6

2.4

2.8

3.2

ID - Amperes

TJ = - 40

125

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

VSD - Volts

TJ = 125

TJ = 25

Fig. 10. Gate Charge

QG - NanoCoulombs

VDS = 600V

I D = 1.2A

I G = 10mA

Fig. 11. Capacitance

100

1000

10000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal Impedance

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

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