IXKC13N80C datasheet(2/2 Pages) IXYS

tên linh kiện	IXKC13N80C

Giải thích chi tiết về linh kiện	CoolMOS Power MOSFET ISOPLUS220

PDF	2 Pages

Scroll/Zoom	100%

nhà sản xuất	IXYS [IXYS Corporation]

Trang chủ	http://www.ixys.com

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2 / 2 page

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072 4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

min.

typ.

max.

g(on)

= 10 V, V

DS = 640 V, ID = 17 A

d(on)

= 10 V, V

DS = 640V

d(off)

D = 17 A, RG = 4.7 Ω

thJC

1.0

K/W

thCH

0.30

K/W

Reverse Conduction

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

F = 6.5 A, VGS = 0 V

1.2

Note 3

Note: 1. MOSFET chip capability

2. Intrinsic diode capability

3. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Note: All terminals are solder plated.

1 - Gate

2 - Drain

3 - Source

ISOPLUS220 OUTLINE

IXKC 13N80C

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